pd -2.462 rev. a 03/99 ? reduced rfi and emi ? reduced snubbing ? extensive characterization of recovery parameters features description hexfred tm diodes are optimized to reduce losses and emi/rfi in high frequency power conditioning systems. an extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. the softness of the recovery eliminates the need for a snubber in most applications. these devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses. ultrafast, soft recovery diode hexfred tm HFA60MB60C absolute maximum ratings (per leg) note: ? limited by junction temperature ? l = 100h, duty cycle limited by max t j w c/w k/w thermal - mechanical characteristics -55 to +150 35 (4.0) ???? 50 (5.7) common cathode anode 2 anode 1 (1-3) (4-6) (7-9) (isolated base) parameter max. units v r cathode-to-anode voltage 600 v i f @ t c = 25c continuous forward current 50 i f @ t c = 100c continuous forward current 24 a i fsm single pulse forward current ? 200 e as non-repetitive avalanche energy ? 220 j p d @ t c = 25c maximum power dissipation 125 p d @ t c = 100c maximum power dissipation 50 t j operating junction and t stg storage temperature range c soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) parameter min. typ. max. units r q jc junction-to-case, single leg conducting ???? ???? 1.0 junction-to-case, both legs conducting ???? ???? 0.50 r q cs case-to-sink, flat, greased surface ???? 0.10 ???? wt weight ???? 58 (2.0) ???? g (oz) mounting torque lbf?in (n?m) d-60 (modified t0-249aa) a v r = 600v v f (typ.) ? = 1.1v i f(av) = 60a q rr (typ.) = 200nc i rrm (typ.) = 6a t rr (typ.) = 30ns di (rec)m /dt (typ.) ? = 170a/s ? 125c 1
HFA60MB60C 2 pd-2.462 rev. a 03/99 outline d-60 (modfied jedec to - 249aa) dimensions in millimeters and inches 61.21 (2.410) 60.71 (2.390) 37.85 (1.490) 38.35 (1.510) 50.80 (2.000) ref. 25.65 (1.010) 25.15 (0.990) 12.70 (0.500) ref. 6.10 (0.240) 6.60 (0.260) 0.76 (0.030) 1.14 (0.045) ref. 1.27 (0.050) 3.30 (0.130) 3.05 (0.120) dia. 4.45 (0.175) 4.95 (0.195) (4 plcs.) 13.21 (0.520) 12.70 (0.500) 10.16 (0.400) 8.38 (0.330) 0.89 (0.035) 1.14 (0.045) 6.60 (0.260) 6.10 (0.240) (8 plcs.) 3.93 (0.155) 3.68 (0.145) 1.14 (0.045) 0.89 (0.035) (9 plcs.) pre-solder dip dimensions * * * 19 lead assignments 1-3 anode 4-6 cathode 7-9 anode base (isolated) a parameter min. typ. max. units test conditions t rr reverse recovery time ??? 30 ??? i f = 1.0a, di f /dt = 200a/s, v r = 30v t rr1 ??? 67 100 ns t j = 25c see t rr2 ??? 112 170 t j = 125c fig. 5 i f = 50a i rrm1 peak recovery current ??? 6.0 11 t j = 25c see i rrm2 ??? 9.0 16 t j = 125c fig. 6 v r = 200v q rr1 reverse recovery charge ??? 200 550 t j = 25c see q rr2 ??? 500 1400 t j = 125c fig. 7 di f /dt = 200a/s di (rec)m /dt1 peak rate of fall of recovery current ??? 250 ??? t j = 25c see di (rec)m /dt2 during t b ??? 170 ??? t j = 125c fig. 8 parameter min. typ. max. units test conditions v br cathode anode breakdown voltage 600 ??? ??? v i r = 100a v fm max forward voltage ??? 1.3 1.5 i f = 30a ??? 1.4 1.7 v i f = 60a ??? 1.1 1.3 i f = 30a, t j = 125c i rm max reverse leakage current ??? 2.0 10 a v r = v r rated ??? 0.50 2.0 ma t j = 125c, v r = 480v c t junction capacitance ??? 68 100 pf v r = 200v l s series inductance ??? 9.2 ??? nh lead to lead 5mm from package body electrical characteristics (per leg) @ t j = 25c (unless otherwise specified) dynamic recovery characteristics (per leg) @ t j = 25c (unless otherwise specified) a/s nc a see fig. 3 see fig. 2 see fig. 1
HFA60MB60C 3 pd-2.462 rev. a 03/99 fig. 4 - maximum thermal impedance z thjc characteristics, (per leg) fig. 2 - typical reverse current vs. reverse voltage, (per leg) fig. 3 - typical junction capacitance vs. reverse voltage, (per leg) fig. 1 - maximum forward voltage drop vs. instantaneous forward current, (per leg) 0.01 0.1 1 10 100 1000 10000 0 200 400 600 r r reverse voltage - v (v) t = 150 c reverse current - i ( a) t = 125 c t = 25c j j j 10 100 1000 1 10 100 1000 t = 25 c j reverse voltage - v (v) r t junction capacitance - c (pf) a 1 10 100 1000 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 fm f instantaneous forward current - i (a) forward voltage drop - v (v) t = 150 c t = 125c t = 25c j j j 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1 thjc t , rectangular pulse duration (seconds) d = 0.50 d = 0.33 d = 0.25 d = 0.17 d = 0.08 single pulse (thermal resistance) thermal impedance - z (k/w) 2 t 1 t p dm notes: 1. duty factor d = t / t 2. peak t = p x z + t jdm thjc c 2 1
HFA60MB60C 4 pd-2.462 rev. a 03/99 fig. 7 - typical stored charge vs. di f /dt, (per leg) fig. 8 - typical di (rec)m /dt vs. di f /dt, (per leg) fig. 5 - typical reverse recovery vs. di f /dt, (per leg) fig. 6 - typical recovery current vs. di f /dt, (per leg) 0 10 20 30 40 100 1000 f di /dt - (a/ s) i = 30a i = 15a f f t - (ns) rr i = 70a v = 200v t = 12 5 c t = 25c r j j f 0 400 800 1200 1600 100 1000 f di /dt - (a/ s) rr q - (nc) i = 30a i = 15a f i = 70a f f v = 200v t = 125 c t = 25c r j j 10 100 1000 10000 100 1000 f di /dt - (a/ s) di(rec)m/dt - (a/ s) i = 15a i = 30a f f i = 70a v = 200v t = 12 5 c t = 25c r j j f 30 60 90 120 150 100 1000 f di /dt - (a/ s) i = 30a i = 15a f f t - (ns) rr i = 70a v = 200v t = 12 5 c t = 25c r j j f
HFA60MB60C 5 pd-2.462 rev. a 03/99 4. q rr - area under curve defined by t rr and i rrm t rr x i rrm q rr = 2 5. di (rec)m /dt - peak rate of change of current during t b portion of t rr v (av al) r(rated) i l(pk) v decay time fig. 11 - avalanche test circuit and waveforms fig. 10 - reverse recovery waveform and definitions fig. 9 - reverse recovery parameter test circuit t a t b t rr q rr i f i rrm i rrm 0.5 di(rec)m/dt 0.75 i rrm 5 4 3 2 0 1 di /dt f 1. di f /dt - rate of change of current through zero crossing 2. i rrm - peak reverse recovery current 3. trr - reverse recovery time measured from zero crossing point of negative going i f to point where a line passing through 0.75 i rrm and 0.50 i rrm extrapolated to zero current reverse recovery circuit irfp250 d.u.t. l = 70 h v = 200v r 0.01 w g d s dif/dt adjust current monitor high-speed switch dut rg = 25 ohm + free-w heel diode vd = 50v l = 100 h http://www.irf.com fax-on-demand: +44 1883 733420 data and specifications subject to change wit hout notice. 233 kansas st., el segundo, california 90245 u.s.a. tel: (310) 322 3331. fax: (310) 322 3332. hurst green, oxted, surrey rh8 9bb, u.k. tel: ++ 44 1883 732020. fax: ++ 44 1883 733408. 15 lincoln court, brampton, markham, ontario l6t3z2. tel: (905) 453 2200. fax: (905) 475 8801. saalburgstrasse 157, 61350 bad homburg. tel: ++ 49 6172 96590. fax: ++ 49 6172 965933. via liguria 49, 10071 borgaro, torino. tel: ++ 39 11 4510111. fax: ++ 39 11 4510220. k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo, japan 171. tel: 81 3 3983 0086. 1 kim seng promenade, great world city west tower,13-11, singapore 237994. tel: ++ 65 838 4630. 16 fl. suite d.207, sec. 2, tun haw south road, taipei, 10673, taiwan. tel: 886 2 2377 9936. world headquarters: european headquarters: ir canada: ir germany: ir italy: ir far east: ir southeast asia: ir taiwan:
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